255 citations · 431 across the 8 of their papers we have counts for
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ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory
Bablu Mukherjee, Ryoma Hayakawa, Kenji Watanabe +3
We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic…
Light-Assisted and Gate-Tunable Oxygen Gas Sensor based on Rhenium Disulfide (ReS2) Field-Effect Transistors
Amir Zulkefli, Bablu Mukherjee, Ryoma Hayakawa +3
Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, thei…
Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures
Bablu Mukherjee, Amir Zulkefli, Kenji Watanabe +3
Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (…