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20132026
most citedNear-direct bandgap / type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

270 citations · 1.2k across the 38 of their papers we have counts for

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physics.app-ph2024

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

Kaijian Xing, Daniel McEwen, Weiyao Zhao +12

Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Ferm…

physics.app-ph2023

Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride

Thi Ngoc Anh Mai, Sajid Ali, Md Shakhawath Hossain +8

Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color…

physics.app-ph2023

Electrically Controlled Reversible Strain Modulation in MoS Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Abin Varghese, Adityanarayan Pandey, Pooja Sharma +3

Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible…

physics.app-ph2021★ 71 cited

Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS Heterostructure

Himani Jawa, Sayantan Ghosh, Abin Varghese +2

Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent repor…

physics.app-ph2019★ 270 cited

Near-direct bandgap / type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

Abin Varghese, Dipankar Saha, Kartikey Thakar +5

PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a dire…