11 citations · 11 across the 2 of their papers we have counts for
2 papers
physics.ins-det2015★ 11 cited
Processing and characterization of epitaxial GaAs radiation detectors
X. Wu, T. Peltola, T. Arsenovich +12
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were proc…
cond-mat.mtrl-sci2009
Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films
Tommi Riekkinen, Jan Saijets, Pasi Kostamo +2
The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As…