Investigation of the Physical Mechanism behind Retention Loss in FeFETs with MIFIFIS Gate Structure

Tao Hu, Zeqi Chen, Runhao Han +19

A Metal-Gate Blocking Layer (GBL)- Ferroelectric-Tunnel Dielectric Layer (TDL)-Ferroelectric -Channel Insulator (Ch.IL)-Si (MIFIFIS) structure is proposed to achieve a larger MW fo…