Effect of Top Al${}_2$O${}_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al${}_2$O${}_3$/Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$/SiO${}_x$/Si (MIFIS) Gate Structure

Tao Hu, Xinpei Jia, Runhao Han +17

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al${}_2$O${}_3$/Hf$_{0.5…