2 papers
cs.AR2026
A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node
Po-Chuan Wang, Dongwon Jang, Eknath Sarkar +5
We propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects…
cond-mat.mes-hall2025
Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM
Md Nahid Haque Shazon, Piyush Kumar, Luqiao Liu +2
This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT mate…