4 papers
The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell
Saina Haghkish, Asghar Asgari
Following letter introduces a theoretical approach to investigate the effect of two-step GaN barrier layer growth methodology on the performance of InGaN/GaN MQW solar cell, in whi…
Vertical transport in InAs/GaSb superlattice: role of ionized impurity and interface roughness scatterings
Sara Safa, Asghar Asgari
We report on the vertical electron mobility versus temperature by applying the interface roughness scattering and ionized impurity scattering in InAs/GaSb superlattices. Using the…
Role of Ionized Impurity and Interface Roughness Scatterings in the Electronic Transport of InAs/GaSb Type II Superlattices at Low Temperatures
Sara Safa, Asghar Asgari
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are in…
Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures
Sara Safa, Asghar Asgari
In this paper, we present a study of the effects of temperature on the electron mobility in InAs/GaSb type-II superlattices (SLs) in which the band structures and wave functions ar…