3 citations · 3 across the 6 of their papers we have counts for
6 papers
Luminescence Emission from Al0.3Ga0.7N/GaN Multi Quantum Disc core/shell Nanowire: Numerical approach
E. Namvari, S. Shojaei, A. Asgari
In this work, a numerical approach to investigate the room temperature luminescence emission from core/shell nanowire is presented where GaN quantum discs (QDiscs), periodically di…
Modeling of novel lateral AlGaAs/GaAs quantum well solar cell
M. Rashidi, Asghar Asgari
In this paper, a novel lateral quantum well solar cell has been introduced, and the structural parameters effects of these nano-structures on the performance of the device have bee…
The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell
Saina Haghkish, Asghar Asgari
Following letter introduces a theoretical approach to investigate the effect of two-step GaN barrier layer growth methodology on the performance of InGaN/GaN MQW solar cell, in whi…
Vertical transport in InAs/GaSb superlattice: role of ionized impurity and interface roughness scatterings
Sara Safa, Asghar Asgari
We report on the vertical electron mobility versus temperature by applying the interface roughness scattering and ionized impurity scattering in InAs/GaSb superlattices. Using the…
Role of Ionized Impurity and Interface Roughness Scatterings in the Electronic Transport of InAs/GaSb Type II Superlattices at Low Temperatures
Sara Safa, Asghar Asgari
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are in…
Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures
Sara Safa, Asghar Asgari
In this paper, we present a study of the effects of temperature on the electron mobility in InAs/GaSb type-II superlattices (SLs) in which the band structures and wave functions ar…