most citedThermal boundary resistance at Si/Ge interfaces determined by approach-to-equilibrium molecular dynamics simulations

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cond-mat.mtrl-sci2015★ 64 cited

Thermal boundary resistance at Si/Ge interfaces determined by approach-to-equilibrium molecular dynamics simulations

Konstanze R. Hahn, Marcello Puligheddu, Luciano Colombo

The thermal boundary resistance of Si/Ge interfaces as been determined using approach-to-equilibrium molecular dynamics simulations. Assuming a reciprocal linear dependence of the…