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cond-mat.mtrl-sci2016
P-type polar transition of chemically doped multilayer MoS2 transistor
Xiaochi Liu, Deshun Qu, Jungjin Ryu +4
The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning effect…
cond-mat.mtrl-sci2015★ 116 cited
Carrier Transport at the Metal-MoS2 Interface
Faisal Ahmed, Min Sup Choi, Xiaochi Liu +1
This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect tr…