11 papers
Spontaneous Transition from Conformal to Two-Dimensional Growth in Ge/GeSn Core/Shell Nanowires
Simone Assali, Sebastian Koelling, Milenka Andelic +3
GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatibl…
Polarization-sensitive GeSn Mid-Infrared Membrane Photodetectors with Integrated Plasmonic Metasurface
Ziqiang Cai, Cédric Lemieux-Leduc, Mahmoud R. M. Atalla +4
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operati…
Midinfrared Semiconductor Photonics - A Roadmap
J. R. Meyer, I. Vurgaftman, S. -Q. Yu +56
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of cur…
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
P. Daoust, N. Rotaru, D. Biswas +9
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing t…
Formation of C-centers in Si-based systems by light ion irradiation
Carolina Crosta, Riccardo Nardin, Patrick Daoust +8
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared col…
Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +5
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing,…