activity
19972019
most citedO-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

444 citations · 532 across the 8 of their papers we have counts for

collaborators
Showing 2010 · cond-mat.mtrl-sciShow all

1 paper · 2 filters

cond-mat.mtrl-sci2010★ 444 cited

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

Byungki Ryu, Hyeon-Kyun Noh, Eun-Ae Choi +1

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes…