9 citations · 19 across the 9 of their papers we have counts for
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cond-mat.mes-hall2017
Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits
Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov +1
Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness param…
cond-mat.mes-hall2015★ 1 cited
Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach
G. I. Zebrev, K. S. Zemtsov, R. G. Useinov +3
We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets in the nanoscale (with feature sizes less than…