activity
20152025
most citedIntegrated Plasmonics: Broadband Dirac Plasmons in Borophene

113 citations · 290 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2025

Distortion-Driven Carrier Decoupling in Doped LiMgPO4

Zhihua Zheng, Xiaolong Yao, Cailian Yu +3

The interplay between lattice distortions and charge carriers governs the properties of many functional oxides. In alkali-doped LiMgPO4, a significant enhancement in dosimetric res…

cond-mat.mes-hall2022★ 16 cited

Characterization and manipulation of intervalley scattering induced by an individual monovacancy in graphene

Yu Zhang, Fei Gao, Shiwu Gao +2

Intervalley scattering involves microscopic processes that electrons are scattered by atomic-scale defects on nanometer length scales. Although central to our understanding of elec…

cond-mat.mtrl-sci2019★ 52 cited

Anomalous Dirac Plasmons in 1D Topological Electrides

Jianfeng Wang, Xuelei Sui, Shiwu Gao +3

Plasmon opens up the possibility to efficiently couple light and matter at sub-wavelength scales. In general, the plasmon frequency is dependent of carrier density. This dependency…

cond-mat.mtrl-sci2018★ 2 cited

Tunable magnetism of a single-carbon vacancy in graphene

Yu Zhang, Fei Gao, Shiwu Gao +1

Removing a single-carbon vacancy introduces (quasi-)localized states for both and electrons in graphene. Interactions between the localized dangling bond and quasilocalized electro…

cond-mat.mtrl-sci2018★ 113 cited

Integrated Plasmonics: Broadband Dirac Plasmons in Borophene

Chao Lian, Shi-Qi Hu, Jin Zhang +4

The past decade has witnessed numerous discoveries of two-dimensional (2D) semimetals and insulators, whereas 2D metals are rarely identified. Borophene, a monolayer boron sheet, h…

cond-mat.mes-hall2015★ 107 cited

Schottky barrier formation and band bending revealed by first principles calculations

Yang Jiao, Anders Hellman, Yurui Fang +2

An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model a…