Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes

Takashi Nakano, Yosuke Harashima, Kenta Chokawa +9

Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform…