2 papers
cond-mat.mtrl-sci2025
Enhancing Hole Mobility in Monolayer p-FETs via Process-Induced Compression
He Lin Zhao, Sheikh Mohd Ta-Seen Afrid, Dongyoung Yoon +7
Understanding the interactions between strain, interfacial mechanics, and electrical performance is critical for designing beyond silicon electronics based on hetero-integrated 2D…
physics.app-ph2025
Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs
Sheikh Mohd Ta-Seen Afrid, He Lin Zhao, Arend M. van der Zande +1
Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging c…