167 citations · 371 across the 9 of their papers we have counts for
9 papers
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
Strain engineering of the electronic states of silicon-based quantum emitters
A. Ristori, N. Granchi, F. Intonti +13
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom waveleng…
Fluorine-based color centers in diamond
S. Ditalia Tchernij, T. Lühmann, E. Corte +14
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room…
Photoluminescence of lead-related optical centers in single-crystal diamond
S. Ditalia Tchernij, T. Lühmann, J. Forneris +13
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photolumin…
Photo-enhanced magnetization in Fe-doped ZnO nanowires
I. Lorite, Y. Kumar, P. Esquinazi +7
An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors nanostructures b…
Wide bandwidth instantaneous RF spectrum analyzer based on nitrogen vacancy centers in diamond
M. Chipaux, L. Toraille, C. Larat +4
We propose an original analog method to perform instantaneous and quantitative spectral analysis of microwave signals. An ensemble of nitrogen-vacancy (NV) centers held in a diamon…
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
I. Lorite, C. Zandalazini, P. Esquinazi +14
The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnet…
Nanoscale nuclear magnetic resonance with a 1.9-nm-deep nitrogen-vacancy sensor
M. Loretz, S. Pezzagna, J. Meijer +1
We present nanoscale NMR measurements performed with nitrogen-vacancy (NV) centers located down to about 2 nm from the diamond surface. NV centers were created by shallow ion impla…