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Cornertronics in Two-Dimensional Second-Order Topological Insulators
Yilin Han, Chaoxi Cui, Xiao-Ping Li +4
Traditional electronic devices rely on the electron's intrinsic degrees of freedom (d.o.f.) to process information. However, additional d.o.f. like the valley, can emerge in the lo…
Higher-order Hall response arises from octupole order and scalar spin chirality in a noncollinear antiferromagnet
Adithya Rajan, Tom G. Saunderson, Fabian R. Lux +19
Noncollinear antiferromagnets can generate a transverse electrical response known as the anomalous Hall effect, even though they possess almost no net magnetization. The microscopi…
Planar Hall effect in topological Weyl and nodal line semimetals
Lei Li, Jin Cao, Chaoxi Cui +2
Using symmetry analysis and semiclassical Boltzmann equation, we theoretically explore the planar Hall effect (PHE) in three-dimensional materials. We demonstrate that PHE is a gen…
Optical bulk-boundary dichotomy in a quantum spin Hall insulator
Junfeng Han, Pengcheng Mao, Hailong Chen +17
The bulk-boundary correspondence is a key concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical…
Effective manipulation and realization of a colossal nonlinear Hall effect in an electric-field tunable moiré system
Jinrui Zhong, Junxi Duan, Shihao Zhang +7
The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symm…
Plasmons in a two-dimensional nonsymmorphic nodal-line semimetal
Jin Cao, Hao-Ran Chang, Xiaolong Feng +2
Recent experiments have established a type of nonsymmorphic symmetry protected nodal lines in the family of two-dimensional (2D) composition tunable materials NbSiTe. Here,…