Morphological characterization of Ge ion implanted SiO2 matrix using multifractal technique

R. P. Yadav, V. Baranwal, Sunil Kumar +2

200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energy were implanted into SiO2 matrix with Different fluences. The implanted samples were annealed at 950 C…