activity
20132022
most citedEffects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

150 citations · 268 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2022

Regulating electron diffraction direction with cylindrically symmetric rotating crystal

L. Cheng, B. Da, X. Liu +12

We report a promising InSiO film that allows simultaneous observation of sample morphology and Kikuchi patterns in raster scan mode of scanning electron microscopy. This new experi…

cond-mat.mtrl-sci2022

Banach fixed-point between SEM image and EBSD diffraction pattern from a cylindrically symmetric rotating crystal

contribute equally, K. Tsukagoshi, T. Nabatame +10

The Kikuchi bands arise from Bragg diffraction of incoherent electrons scattered within a crystalline specimen and can be observed in both the transmission and reflection modes of…

physics.app-ph2019★ 57 cited

An On-Chip Quad-Wavelength Pyroelectric Sensor for Spectroscopic Infrared Sensing

Thang Duy Dao, Satoshi Ishii, Anh Tung Doan +4

Merging photonic structures and optoelectronic sensors into a single chip may yield a sensor-on-chip spectroscopic device that can measure the spectrum of matters. In this work, we…

cond-mat.mtrl-sci2019★ 24 cited

Si-incorporated amorphous indium oxide thin-film transistors

Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi

Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the…

cond-mat.mtrl-sci2015★ 37 cited

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

Shinya Aikawa, Nobuhiko Mitoma, Takio Kizu +2

We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison…

cond-mat.mtrl-sci2013★ 150 cited

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi

Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change…