activity
20152022
most citedTerahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC

19 citations · 46 across the 4 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci202219 cited

Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC

Mathias Schubert, Sean Knight, Steffen Richter +8

We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magne…

cond-mat.mtrl-sci2021

Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic InO

Megan Stokey, Rafal Korlacki, Sean Knight +8

A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic…

cond-mat.mtrl-sci20218 cited

Fingerprints of optical absorption in the perovskite LaInO: Insight from many-body theory and experiment

Wahib Aggoune, Klaus Irmscher, Dmitrii Nabok +5

We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO. Employing density-f…

cond-mat.mtrl-sci2020

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Prashanth Gopalan, Sean Knight, Ashish Chanana +11

The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…

cond-mat.mtrl-sci2020

Thermal conductivity of bulk InO single crystals

Liangcai Xu, Benoit Fauqué, Zengwei Zhu +3

The transparent semiconductor InO is a technologically important material. It combines optical transparency in the visible frequency range and sizeable electric conduct…

cond-mat.mtrl-sci202018 cited

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Ivan Gamov, Eberhard Richter, Markus Weyers +10

Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds , the carbon atoms increasingly form triatomic cluster…