activity
20102026
most citedWide band gap chalcogenide semiconductors

514 citations · 1.8k across the 73 of their papers we have counts for

collaborators
Showing 2020Show all

6 papers · 1 filter

cond-mat.mtrl-sci2020

The role of disorder in the synthesis of metastable zinc zirconium nitrides

Rachel Woods-Robinson, Vladan Stevanović, Stephan Lany +4

In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride mate…

cond-mat.mtrl-sci2020★ 1 cited

contact to absorber for photovoltaic and photoelectrochemical devices

Imran S. Khan, Christopher P. Muzzillo, Craig L. Perkins +4

is a promising candidate material with wide band gap for top cells in tandem photovoltaic (PV) and photoelectrochemical (PEC) devices. However, traditional CdS contact…

cond-mat.mtrl-sci2020

Thin Film Growth Effects on Electrical Conductivity in Entropy Stabilized Oxides

Valerie Jacobson, Dave Diercks, Bobby To +2

Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leavi…

cond-mat.mtrl-sci2020★ 9 cited

Synthesis of tunable nanoscale superlattices

Dennice M. Roberts, Dylan Bardgett, John D. Perkins +3

Nanoscale superlattices represent a compelling platform for designed materials as the specific identity and spatial arrangement of constituent layers can lead to tunable properties…

physics.app-ph2020★ 10 cited

Growth and Characterization of Homoepitaxial -GaO Layers

M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2

-GaO is a next-generation ultra wide bandgap semiconductor (E = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…

cond-mat.mtrl-sci2020★ 5 cited

Synthesis of ferroelectric LaWN3 -- the first nitride perovskite

Kevin R. Talley, Craig L. Perkins, David R. Diercks +2

Next generation telecommunication technologies would benefit from strong piezoelectric and ferroelectric response in materials that are compatible with nitride radio-frequency elec…