L. Kornblum

activity

20152026

most citedThickness Dependence of the Physical Properties of Atomic-Layer Deposited Al2O3

27 citations · 124 across the 15 of their papers we have counts for

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Showing physics.app-phShow all

2 papers · 1 filter

physics.app-ph2022★ 12 cited

Scalable $A l_{2} O_{3} - Ti O_{2}$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Yang Li, Wei Wang, Di Zhang +5

Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a s…

physics.app-ph2019★ 18 cited

Understanding Leakage Currents through $A l_{2} O_{3}$ on $S r T i O_{3}$

Dror Miron, Igor Krylov, Maria Baskin +2

Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechani…

Scalable Al2​O3​−TiO2​ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Understanding Leakage Currents through Al2​O3​ on SrTiO3​

Scalable $A l_{2} O_{3} - Ti O_{2}$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Understanding Leakage Currents through $A l_{2} O_{3}$ on $S r T i O_{3}$