activity
20142025
most citedCreating and Probing Electron Whispering Gallery Modes in Graphene

210 citations · 483 across the 9 of their papers we have counts for

collaborators

9 papers

quant-ph2025★ 20 cited

Roadmap on Atomic-scale Semiconductor Devices

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…

quant-ph2024

Analog Quantum Simulator of a Quantum Field Theory with Fermion-Spin Systems in Silicon

Ali Rad, Alexander Schuckert, Eleanor Crane +7

Simulating fermions coupled to spin degrees of freedom, relevant for a range of quantum field theories, represents a promising application for quantum simulators. Mapping fermions…

cond-mat.mtrl-sci2021

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri +4

Doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy…

quant-ph2021★ 78 cited

Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots

Xiqiao Wang, Ehsan Khatami, Fan Fei +6

The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconduc…

cond-mat.mes-hall2019

Atomic-scale Control of Tunnel Coupling

Xiqiao Wang, Jonathan Wyrick, Ranjit V. Kashid +6

Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coup…

cond-mat.mtrl-sci2017

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri +8

Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision.…