3 citations · 3 across the 2 of their papers we have counts for
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physics.ins-det2016
Study of the breakdown voltage of SiPMs
V. Chmill, E. Garutti, R. Klanner +2
The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 1515, 2525, 5050, and 100100 m, manufactured by KETEK, has…
physics.ins-det2016
The influence of edge effects on the determination of the doping profile of silicon pad diodes
M. Hufschmidt, E. Fretwurst, E. Garutti +3
Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different…
physics.ins-det2015
Impact of low-dose electron irradiation on n+p silicon strip sensors
The Tracker Group of the CMS Collaboration
The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were perfor…