8 citations · 8 across the 1 of their papers we have counts for
3 papers
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
Vladimir M. Kaganer, Domenik Spallek, Philipp John +2
Correlations between dislocations in crystals reduce the elastic energy via screening of the strain by the surrounding dislocations. We study the correlations of threading dislocat…
ScN/GaN(): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
Philipp John, Achim Trampert, Duc Van Dinh +6
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN() surface. To this end, ScN is grown on free-standing GaN() substrates and self-ass…
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…