1 citations · 1 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025★ 1 cited
Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6
This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…
physics.app-ph2025
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…