Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates

A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6

This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…