13 citations · 22 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2016★ 13 cited
Spatially resolved electronic structure of an isovalent nitrogen center in GaAs
R. C. Plantenga, V. R. Kortan, T. Kaizu +4
Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating very large shifts in the conduction-band energies with nonlinear concentration d…
cond-mat.mes-hall2016★ 8 cited
Nanometer-scale Exchange Interactions Between Spin Centers in Diamond
V. R. Kortan, C. Şahin, M. E. Flatté
Exchange interactions between isolated pairs of spin centers in diamond have been calculated, based on an accurate atomistic electronic structure for diamond and any impurity atoms…
cond-mat.mes-hall2015★ 1 cited
Changing the lattice position of a bistable single magnetic dopant in a semiconductor using a scanning tunneling microscope
J. M. Moore, V. R. Kortan, M. E. Flatté +2
We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias vo…