most citedImpact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

30 citations · 33 across the 2 of their papers we have counts for

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cond-mat.mes-hall2015★ 3 cited

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors

Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2

Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were ta…

cond-mat.mes-hall2014★ 30 cited

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2

Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the l…