activity
20132020
most citedDesign principles for HgTe based topological insulator devices

32 citations · 189 across the 27 of their papers we have counts for

collaborators
Showing 2014Show all

4 papers · 1 filter

cond-mat.mes-hall2014★ 7 cited

The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in BiSe topological insulator

Parijat Sengupta

BiSe is a well known 3D-topological insulators(TI) with a non-trivial Berry phase of attributed to the topology of the band structure. The Berry p…

cond-mat.mes-hall2014

Numerical guidelines for setting up a general purpose k.p simulator with applications to quantum dot heterostructures and topological insulators

Parijat Sengupta, Hoon Ryu, Sunhee Lee +2

The k.p perturbation method for determination of electronic structure first pioneered by Kohn and Luttinger continues to provide valuable insight to several band structure features…

cond-mat.mes-hall2014★ 7 cited

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructures

Parijat Sengupta, Tillmann Kubis, Yaohua Tan +1

BiTe and BiSe are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess…

cond-mat.mes-hall2014★ 1 cited

Atomistic and continuum modeling of a zincblende quantum dot heterostructure

Parijat Sengupta, Sunhee Lee, Sebastian Steiger +2

A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obta…