1 citations · 1 across the 4 of their papers we have counts for
5 papers
Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen +9
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Ferm…
High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes
Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho +10
The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a…
Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions
Fu-Yu Shih, Yueh-Chun Wu, Yi-Siang Shih +6
Two-dimensional (2D) materials are composed of atomically thin crystals with an enormous surface-to-volume ratio, and their physical properties can be easily subjected to the chang…
Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces
Po-Hsiang Wang, Fu-Yu Shih, Shao-Yu Chen +7
We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto…
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors
Yueh-Chun Wu, Cheng-Hua Liu, Shao-Yu Chen +5
Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelect…