Improved current saturation and shifted switching threshold voltage in In2O3 nanowire based, fully transparent NMOS inverters via femtosecond laser annealing

Chunghun Lee, Sangphill Park, Pornsak Srisungsitthisunti +7

Transistors based on various types of non-silicon nanowires have shown great potential for a variety of applications, especially for those require transparency and low-temperature…