30 citations · 65 across the 7 of their papers we have counts for
8 papers
Circuit-Level Design, Modeling, and On-Wafer Characterization of a Coplanar THz Optoelectronic Mixer
S. Islam, V. Merupo, C. Chamek +13
We report the design, modeling, and on-wafer characterization of a photoconductive heterodyne mixer implemented as a true terahertz monolithic integrated circuit (TMIC). Unlike pre…
Room-temperature, continuous-wave Terahertz generation in free-space with an intersubband mid-infrared photomixer
Q. Lin, J-F. Lampin, G. Ducournau +4
We demonstrate a Terahertz photomixer pumped by mid-infrared photons at 10m wavelength. The device is based on a dual-antenna architecture, in which a two-dimensional array of m…
Real-time, chirped-pulse heterodyne detection at room-temperature with 100GHz 3dB-bandwidth mid-infrared quantum-well photodetectors
Quyang Lin, Michael Hakl, Sylvie Lepillet +4
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared fr…
Ultra-fast quantum-well infared photodetectors operating at 10μm with flat response up to 70GHz at room temperature
M. Hakl, Q. Y. Lin, S. Lepillet +9
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work…
Anomalous temperature dependence of photoelectron charge and spin mobilities in p+-GaAs
F. Cadiz, D. Paget, A. C. H. Rowe +2
The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and sp…
Absence of an intrinsic value for the surface recombination velocity in doped semiconductors
F. Cadiz, D. Paget, V. L. Berkovits +4
A self-consistent expression for the surface recombination velocity and the surface Fermi level unpinning energy as a function of light excitation power () is presented for…
Imaging ambipolar diffusion of photocarriers in GaAs thin films
Daniel Paget, Fabian Cadiz, Alistair Rowe +3
Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. Wh…
Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces
D. Vu, S. Arscott, E. Peytavit +7
The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied…