61 citations · 212 across the 9 of their papers we have counts for
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Inherited Weak Topological Insulator Signatures in Topological Hourglass Semimetal Nb3XTe6 (X = Si, Ge)
Q. Wan, T. Y. Yang, S. Li +17
Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved…
Electron-polaron dichotomy of charge carriers in perovskite oxides
Marius-Adrian Husanu, Lorenzo Vistoli, Carla Verdi +10
Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not a…
Three-dimensionality of mobile electrons at X-ray-irradiated LaAlO/SrTiO interfaces
V. N. Strocov, M. -A. Husanu, A. Chikina +4
Effects of X-ray irradiation on the electronic structure of LaAlO/SrTiO (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their sto…
k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
L. L. Lev, I. O. Maiboroda, M. -A. Husanu +10
Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics,…
Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics
Leonid L. Lev, Dmitry V. Averyanov, Andrey M. Tokmachev +4
Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the pr…