EXAFS and electrical studies of new narrow-gap semiconductors: InTe${}_{1-x}$Se${}_x$ and In${}_{1-x}$Ga${}_x$Te

A. I. Lebedev, A. V. Michurin, I. A. Sluchinskaya +2

The local environment of Ga, Se, and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities,…