M. Scarpulla

collaborators

6 papers

cond-mat.mtrl-sci2025

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C

Hunter Ellis, Bobby G. Duersch, Botong Li +4

NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) fro…

cond-mat.mtrl-sci2025

High thermal conductivity of rutile-GeO $_{2}$ films grown by MOCVD: $52.9 W m^{- 1} K^{- 1}$

Imteaz Rahaman, Michael E. Liao, Ziqi Wang +10

Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, an…

cond-mat.mtrl-sci2025

Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD

Imteaz Rahaman, Botong Li, Hunter D. Ellis +4

Rutile germanium dioxide (r-GeO2) is an ultra-wide bandgap semiconductor with potential for ambipolar doping, making it a promising candidate for next-generation power electronics…

cond-mat.mtrl-sci2025

Diffusion of acceptor dopants in monoclinic $I^^{2}$ -Ga $_{2}$ O $_{3}$

Channyung Lee, Michael A. Scarpulla, Elif Ertekin +1

$I^^{2}$ -Ga $_{2}$ O $_{3}$ is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-…

cond-mat.mtrl-sci2025

Degradation of 2.4-kV $G a_{2} O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 Â°C

Hunter Ellis, Wei Jia, Imteaz Rahaman +5

Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at…

cond-mat.mtrl-sci2025

Quantitative Modeling of Point Defects in $I^^{2}$ -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics

Khandakar Aaditta Arnab, Megan Stephens, Isaac Maxfield +5

B-gallium oxide (B-Ga2O3) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and hi…

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C

High thermal conductivity of rutile-GeO2​ films grown by MOCVD: 52.9 Wm−1K−1

Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD

Diffusion of acceptor dopants in monoclinic I^2-Ga2​O3​

Degradation of 2.4-kV Ga2​O3​ Schottky Barrier Diode at High Temperatures up to 500 Â°C

Quantitative Modeling of Point Defects in I^2-Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics

High thermal conductivity of rutile-GeO $_{2}$ films grown by MOCVD: $52.9 W m^{- 1} K^{- 1}$

Diffusion of acceptor dopants in monoclinic $I^^{2}$ -Ga $_{2}$ O $_{3}$

Degradation of 2.4-kV $G a_{2} O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 Â°C

Quantitative Modeling of Point Defects in $I^^{2}$ -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics