activity
20152021
most citedThe effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

6 citations · 7 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.soft2021

The influence of adsorbed atoms concentration on the temperature coefficient of resonant frequency of the quasi-Rayleigh wave

M. Ya. Seneta, R. M. Peleshchak, A. I. Nesterivskyi +2

Within the model of self-consistent connection of quasi-Rayleigh wave with adsorbed atoms, a method of constructing a new class of radiometric sensors of the temperature and concen…

cond-mat.mes-hall20196 cited

The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

R. M. Peleshchak, O. V. Kuzyk, O. O. Dan'kiv +1

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in -GaAs semiconductor is investigated. It…

cond-mat.str-el2018

The theory of electron states on the dynamically deformed adsorbed surface of a solid

R. M. Peleshchak, M. Ya. Seneta

Dispersion relations for the spectra of surface electron states on a dynamically deformed adsorbed surface of a monocrystal with the Zinc blende structure are received. It is estab…

cond-mat.mtrl-sci20171 cited

Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter

Y. O. Uhryn, R. M. Peleshchak, V. B. Brytan +1

Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter ha…

cond-mat.mes-hall2015

Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model

R. M. Peleshchak, N. Y. Kulyk, M. V. Doroshenko

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/InGaAs/GaAs considering the self-assembled deformation-dif…