2 papers
cond-mat.mtrl-sci2025
Epitaxial Recovery of beta-Ga2O3 after High Dose Implantation
Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +3
As an ultrawide bandgap semiconductor, beta-Ga2O3 has been attractive for its strong tolerance to irradiation damage and high n-type conductivity through ion implantation. Homoepit…
cond-mat.mtrl-sci2025
Limitations on Activation of High Dose Ge implant in beta-Ga2O3
Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +6
Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are req…