43 citations · 57 across the 5 of their papers we have counts for
6 papers · 1 filter
Low Temperature Growth of Graphene on Semiconductor
Håkon I. Røst, Rajesh K. Chellappan, Frode S. Strand +13
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene…
Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface
Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin +12
The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg…
Epitaxial growth of SiC on (100) Diamond
A. Tsai, A. Aghajamali, N. Dontschuk +11
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…
Electronic bandstructure of in-plane ferroelectric van der Waals
James L. Collins, Chutian Wang, Anton Tadich +11
Layered indium selenides () have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the and ' phases, respectively. In this…
Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
James L. Collins, Anton Tadich, Weikang Wu +11
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In thi…
Extremely high negative electron affinity of diamond via magnesium adsorption
Kane M. O'Donnell, Mark T. Edmonds, Anton Tadich +5
We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to e…