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20052010
most citedOrigin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping

575 citations · 758 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2010★ 8 cited

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Bilal Gokce, David E. Aspnes, Gerald Lucovsky +1

It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidat…