248 citations · 1.4k across the 44 of their papers we have counts for
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cond-mat.mtrl-sci2006
Hf defects in HfO2/Si
W. L. Scopel, Antonio J. R. da Silva, A. Fazzio
We investigate the possibility that Hf defects exist in the Si channel of HfO2 Si-based metal-oxide-semiconductor devices. We have studied, using ab initio Density Functional Theor…
cond-mat.mtrl-sci2001★ 16 cited
Electron correlation in the Si(100) surface
Oscar Paz, Antonio J. R. da Silva, Juan Jose Saenz +1
Motivated by the controversy between quantum chemists and solid-state physicists, and by recent experimental results, spin-polarized density-functional (DFT) calculations are used…