49 citations · 98 across the 4 of their papers we have counts for
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cond-mat.mes-hall2015★ 49 cited
Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
Y. Zhao, Z. Wan, X. Xu +3
Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we…
cond-mat.mes-hall2011★ 6 cited
Dual top gated graphene transistor in the quantum Hall regime
Ajay K. Bhat, Vibhor Singh, Sunil Patil +1
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the form…
cond-mat.mes-hall2010★ 43 cited
Tuning mechanical modes and influence of charge screening in nanowire resonators
Hari S. Solanki, Shamashis Sengupta, Sajal Dhara +6
We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FE…