161 citations · 304 across the 10 of their papers we have counts for
Showing 2015Show all
2 papers · 1 filter
physics.ins-det2015★ 2 cited
Compensation for TID Damage in SOI Pixel Devices
Naoshi Tobita, Shunsuke Honda, Kazuhiko Hara +7
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environ…
physics.ins-det2015★ 1 cited
X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement
Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai +5
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for…