387 citations · 704 across the 12 of their papers we have counts for
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Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Sachin Gupta, F. Rortais, R. Ohshima +4
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS…
Indirect bandgap of hBN-encapsulated monolayer MoS2
Yosuke Uchiyama, Kenji Watanabe, Takashi Taniguchi +5
We present measurements of temperature dependence of photoluminescence intensity from monolayer MoS2 encapsulated by hexagonal boron nitride (hBN) flakes. The obtained temperature…
Interband resonant high-harmonic generation by valley polarized electron-hole pairs
Naotaka Yoshikawa, Kohei Nagai, Kento Uchida +4
We demonstrated nonperturbative high harmonics induced by intense mid-infrared light up to 18th order that well exceed the material bandgap in monolayer transition metal dichalcoge…