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20132022
most citedDoes P-type Ohmic Contact Exist in WSe2-metal Interfaces?

211 citations · 1.3k across the 15 of their papers we have counts for

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Showing 2015Show all

6 papers · 1 filter

cond-mat.mtrl-sci2015★ 155 cited

Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of Monolayer Distorted 1-T Diamond-chain Structures

Hong-Xia Zhong, Shiyuan Gao, Jun-Jie Shi +1

We report many-body perturbation theory calculations of excited-state properties of distorted 1-T diamond-chain monolayer rhenium disulfide (ReS2) and diselenide (ReSe2). Electroni…

cond-mat.mtrl-sci2015★ 211 cited

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Yangyang Wang, Ruoxi Yang, Ruge Quhe +9

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…

cond-mat.mes-hall2015★ 3 cited

Monolayer Phosphorene-Metal Interfaces

Yuanyuan Pan, Yangyang Wang, Meng Ye +9

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…

cond-mat.mtrl-sci2015★ 24 cited

Silicene on Substrates: A Theoretical Perspective

Hongxia Zhong, Ruge Quhe, Yangyang Wang +2

Silicene, as the silicon analog of graphene, has been successfully fabricated by epitaxial growing on various substrates. Similar to free-standing graphene, free-standing silicene…

cond-mat.mes-hall2015★ 173 cited

Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide

Huan Zhao, Jiangbin Wu, Hongxia Zhong +6

Recently, two-dimensional (2D) materials with strong in-plane anisotropic properties such as black phosphorus have demonstrated great potential for developing new devices that can…

cond-mat.mes-hall2015★ 14 cited

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Hongxia Zhong, Zeyuan Ni, Yangyang Wang +8

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal…