Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO${}_2$

R. J. Green, D. A. Zatsepin, D. J. St. Onge +4

Cobalt and manganese ions are implanted into SiO${}_2$ over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxyge…