Thomas Auzelle

most citedCathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

29 citations · 29 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2024

Growth of compositionally uniform $In_{x} Ga_{1 - x} N$ layers with low relaxation degree on GaN by molecular beam epitaxy

Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7

500-nm-thick $In_{x} Ga_{1 - x} N$ layers with $x =$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…

cond-mat.mtrl-sci2024

Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

Jingxuan Kang, Rose-Mary Jose, Miriam Oliva +6

The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation…

cond-mat.mes-hall2014★ 29 cited

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Gilles Nogues, Thomas Auzelle, Martien Den Hertog +2

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning tran…

Growth of compositionally uniform Inx​Ga1−x​N layers with low relaxation degree on GaN by molecular beam epitaxy

Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Growth of compositionally uniform $In_{x} Ga_{1 - x} N$ layers with low relaxation degree on GaN by molecular beam epitaxy