5.3k citations · 36.1k across the 195 of their papers we have counts for
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Realization of Kane-Mele Model in -Embedded Graphene (=Pt, Ir, Rh, Os)
Haonan Wang, Qian Niu, Zhenhua Qiao
Monolayer graphene embedded with transition metal nitride (i.e., N) has been experimentally synthesized recently, where a transition metal atom together with four nitrogen a…
Van der Waals Heterostructure PtHgSe/CrI for Topological Valleytronics
Zheng Liu, Yulei Han, Yafei Ren +2
We identify a valley-polarized Chern insulator in the van der Waals heterostructure, PtHgSe/CrI, for potential applications with interplay between electric, magneti…
Valley-Contrasting Orbital Magnetic Moment Induced Negative Magnetoresistance
Hailong Zhou, Cong Xiao, Qian Niu
The valley-contrasting orbital magnetic moment of Bloch electrons allows the lifting of valley degeneracy by an out-of-plane magnetic field. We demonstrate that this leads to negat…
Geometrodynamics of electrons in a crystal under position and time dependent deformation
Liang Dong, Qian Niu
Semiclassical dynamics of Bloch electrons in a crystal under slowly varying deformation is developed in the geometric language of a lattice bundle. Berry curvatures and gradients o…
Observation of long phase-coherence length in epitaxial La-doped CdO thin films
Yu Yun, Yang Ma, Songsheng Tao +9
The search for long electron phase coherence length, which is the length that an electron can keep its quantum wave-like properties, has attracted considerable interest in the last…
Out-of-plane carrier spin in transition-metal dichalcogenides under electric current
Xiao Li, Hua Chen, Qian Niu
In a multilayer comprising ferromagnet and heavy metal, in-plane carrier spin is induced by applied electric current owing to Rashba spin-orbit coupling, while the out-of-plane com…
Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film
Xiao Li, Qian Niu
A defining feature of topological insulating phases is symmetry-protected interfacial Dirac states. SnTe is a representative topological crystalline insulator, of which (110) thin…
Linear magnetoresistance induced by intra-scattering semiclassics of Bloch electrons
Cong Xiao, Hua Chen, Yang Gao +3
The weak field magnetoresistance has seen a revived interest due to the distinct role played by the momentum-space Berry curvature of Bloch electrons. While most previous studies i…
Topological Phases in Two-Dimensional Materials: A Brief Review
Yafei Ren, Zhenhua Qiao, Qian Niu
Topological phases with insulating bulk and gapless surface or edge modes have attracted much attention because of their fundamental physics implications and potential applications…
Large magneto-optical Kerr effect in noncollinear antiferromagnets Mn ( = Rh, Ir, or Pt)
Wanxiang Feng, Guang-Yu Guo, Jian Zhou +2
Magneto-optical Kerr effect, normally found in magnetic materials with nonzero magnetization such as ferromagnets and ferrimagnets, has been known for more than a century. Here, us…
Giant and tunable valley degeneracy splitting in MoTe2
Jingshan Qi, Xiao Li, Qian Niu +1
Monolayer transition-metal dichalcogenides possess a pair of degenerate helical valleys in the band structure that exhibit fascinating optical valley polarization. Optical valley p…
Single-Valley Engineering in Graphene Superlattices
Yafei Ren, Xinzhou Deng, Changsheng Li +5
The two inequivalent valleys in graphene preclude the protection against inter-valley scattering offered by an odd-number of Dirac cones characteristic of Z2 topological insulator…
Anomalous Nernst and Hall effects in magnetized platinum and palladium
G. Y. Guo, Q. Niu, N. Nagaosa
We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the…
Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap
Zhigang Song, Cheng-Cheng Liu, Jinbo Yang +7
Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room t…
Designer Topological Insulators in Superlattices
Xiao Li, Fan Zhang, Qian Niu +1
Gapless Dirac surface states are protected at the interface of topological and normal band insulators. In a binary superlattice bearing such interfaces, we establish that valley-de…
Anomalous Hall effect arising from noncollinear antiferromagnetism
Hua Chen, Qian Niu, A. H. MacDonald
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an e…
Gate-Tunable Exchange Coupling Between Cobalt Clusters on Graphene
Hua Chen, Qian Niu, Zhenyu Zhang +1
We use spin-density-functional theory (SDFT) ab initio calculations to theoretically explore the possibility of achieving useful gate control over exchange coupling between cobalt…
Coupling the valley degree of freedom to antiferromagnetic order
Xiao Li, Ting Cao, Qian Niu +2
Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedo…
Microscopic theory of quantum anomalous Hall effect in graphene
Zhenhua Qiao, Hua Jiang, Xiao Li +2
We present a microscopic theory to give a physical picture of the formation of quantum anomalous Hall (QAH) effect in graphene due to a joint effect of Rashba spin-orbit coupling $…
MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
Ting Cao, Ji Feng, Junren Shi +2
A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$…
Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene
Zhenhua Qiao, Wang-Kong Tse, Hua Jiang +2
We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under pr…
Magnetic and Electronic Properties of Metal-Atom Adsorbed Graphene
Jun Ding, Zhenhua Qiao, Wanxiang Feng +2
We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3d-transition and noble metal atoms using first principles calculation method…
Spin Polarized and Valley Helical Edge Modes in Graphene Nanoribbons
Zhenhua Qiao, Yugui Yao, Shengyuan A. Yang +2
Inspired by recent progress in fabricating precisely zigzag-edged graphene nanoribbons and the observation of edge magnetism, we find that spin polarized edge modes with well-defin…
Quantum Size Effect and Electronic Stability of Freestanding Metal Atom Wires
Haiping Lan, Ping Cui, Jun-Hyung Cho +3
Using DFT calculations, we present a thorough study of the quantum size effects on the stability of freestanding metal atom wires. Our systems include Na, Ag, Au, In, Ga and Pb ato…