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cond-mat.mtrl-sci2025
In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C
Botong Li, Bobby G. Duersch, Hunter Ellis +6
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-…
cond-mat.mtrl-sci2024
A TEM Study of MOCVD-Grown Rutile GeO2 Films
Imteaz Rahaman, Botong Li, Hunter D. Ellis +3
Ultrawide bandgap (UWBG) semiconductors are promising for next-generation power electronics, largely attributed to their substantial bandgap and exceptional breakdown electric fiel…