32 citations · 58 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2017★ 1 cited
High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride
Hadi Arjmandi-Tash, Dipankar Kalita, Zheng Han +9
We present a transfer-free preparation method for graphene on hexagonal boron nitride (h-BN) crystals by chemical vapor deposition of graphene via a catalytic proximity effect, i.e…
cond-mat.mes-hall2016★ 32 cited
Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe
W. L. Liu, M. L. Chen, X. X. Li +15
Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essentia…
cond-mat.mes-hall2014★ 25 cited
Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
F. Lafont, R. Ribeiro-Palau, Z. Han +8
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the…